note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: SCR010B doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / sfs302 ___ s.22 _ __ screening 2 / __ = not screened tx = tx level txv = txv s = s level voltage/family 7 = 30v 8 = 60v 9 = 100v sfs3027s.22 through sfs3029s.22 0.5 amp, 30 - 100 volt silicon controlled rectifier features: ? passivated planar construction ? low on-state voltage and fast switching ? hermetically sealed surface mount power package maximum ratings symbol value units peak repetitive reverse voltage and dc blocking voltage sfs3027 sfs3028 sfs3029 v drm v rrm 30 60 100 volts non-repetitive peak reverse blocking voltage (t < 5.0 ms) sfs3027 sfs3028 sfs3029 v rsm 50 100 200 volts rms on-state current, (all conduction angles, t c = 100c ) i t (rms) 0.5 amps peak non-repetitive surge current (one cycle, 60 hz ) i tsm 8 amps peak gate power p gm 0.1 watts average gate current i g(ave) 0.025 amps peak gate current i gm 0.25 amps reverse gate current i gr 0.003 amps reverse gate voltage v gm 5.0 volts operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +200 c thermal resistance, junction to case r jc 15 c/w notes: 1 / for ordering information, pr ice, operating curves, and av ailability- contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25c. smd.22
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: SCR010B doc electrical characteristics symbol min typical max unit peak reverse blocking current rated v rrm , r gk = 1000 ? t c = 25c t c = 150c i rrm ?? 0.08 0.15 0.1 50 a peak forward blocking current rated v drm , r gk = 1000 ? t c = 25c t c = 150c i drm ?? 0.08 0.15 0.1 20 a peak on-state voltage i f = 1.0 a pulse v tm 0.8 1.1 1.5 v gate trigger current v d = 5 v dc , r l = 100 ? , r e = 10 k ? t c = 25c t c = -65c i gt ?? ?? 25 50 200 1200 a gate trigger voltage v d = 5 v dc , r l = 100 ? , r e = 100 ? t c = 25c t c = -65c t c = 150c v gt 0.4 0.6 0.1 0.55 0.75 0.20 0.8 1.1 0.6 v holding current v d = 5 v dc , r gk = 1000 ? t c = 25c t c = -65c t c = 150c i h 0.3 0.5 0.05 1.0 1.5 0.38 5.0 10.0 1.0 ma case outline: smd.22 pad 1: anode pad 2: cathode pad 3: gate solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sfs3027s.22 through sfs3029s.22
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